Antimonide Based Infrared Detector Capability
Presenting Author: Sanjay Krishna
Organization: The Ohio State University
Co-Author(s): Christopher D. Ball, Vinita Dahiya, Rudy Fink, Sri Harsha Kodati, Seunghyun Lee, Sen Mathews, Brett Ringel, Theodore J Ronningen, Jeffrey Simon, Teressa Specht, Zahra Taghipour
Ohio State’s Krishna INfrared Detector (KIND) group researches, develops, and applies novel infrared detectors and imagers. The team specializes in antimonide-based, III-V semiconductor materials that will enhance future capabilities for infrared imaging and lidar remote sensing. The goal of the group is to investigate the next generation of highly sensitive infrared detectors and focal plane arrays by minimizing intrinsic sources of noise, using novel semiconductor heterostructure design, incorporating non-traditional optical elements, and customizing circuit architecture. The team uses Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) to grow antimonide based heterostructures that are sensitive across the infrared: short wave (SWIR, 1-3 µm), mid wave (MWIR, 3-5 µm) and long wave (LWIR, 8-14 µm). The team uses Ohio State’s Nanotech West cleanroom capabilities to fabricate detectors and arrays. These detectors and imagers are then quantitatively characterized to determine their performance over a wide range of temperature, and these characterization results provide feedback into a cycle of design, growth, fabrication, and testing. Ongoing research includes applying Type-II Superlattice Structures to develop avalanche photodiodes, coupling thermophotovoltaic heterostructures with a novel readout circuit, and integrating resonator antenna structures directly on semiconductor detectors to improve performance at higher temperatures.