Title: Highly-Integrated Submillimeter-Wave Radiometric Receivers based on 25-nm InP HEMT Low-Noise Amplifiers
Presenting Author: William Deal
Organization: Northrop Grumman Corporation
Co-Author(s): W.R. Deal, P. Kangaslahiti, A. Zamora, K. Leong, E. Schlecht, G. Mei, S.C. Reising

Abstract:
Over the last decade, short gatelength (25 nm) InP HEMTs have been shown to have a maximum frequency of oscillation (fMAX) significantly higher than 1 THz making this technology suitable for both low noise and power amplification to frequencies well into the submillimeter wave frequency band. Successful application of this problem to the area of submillimeter wave radiometry should have significant impact to sensitivity, weight, and power. In this talk, progress on the TWICE 670 GHz integrated receiver is presented. A status update or the 25 nm InP HEMT technology will be provided, as well as a detailed look into technical challenges and progress in related applications.